Effects of H-implantation on the optical stability under photo-irradiation of urushi films

A study has been made of the effects of H-implantation on the optical stability under photo-irradiation of urushi films.Urushi filmes of 43 μm in thickness were lacquered on glass plates.Implantation of H+,H+2,C+,N+and O+ ions were perfomed with an energy of 150 keV and doses of 1×1014 and 1×1015 ions / cm2 at room temperature.The beam current density used was approximately 1 μA / cm2 to prevent specimens from heating.The photo-irradiation onto the surfaces of urushi film was carried out to radiative exposure of 190MJ/m2,using a Suga sunshine weather meter.The gloss,transmittance and haze of implanted and photo-irradiated urushi film have been investigated in conjuncion with chemical bonding states of carbon at the urushi surface.Ion implantation induces the surface carbonization of urushi films to inhibit the change in gloss and haze by photo-irradiation.It is concluded that ion implantation is useful for improving the optical stability under photo-irradiation of urushi film.